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| Data Sheet No. 2N3700UB Type 2N3700UB Geometry 4500 Polarity NPN Qual Level: JAN - JANS Features: * * * * General-purpose low power silicon transistor. Housed in a cersot case. Also available in chip form using the 4500 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/391 which Semicoa meets in all cases. Radiation graphs available. Generic Part Number: 2N3700UB REF: MIL-PRF-19500/391 Cersot * Maximum Ratings TC = 25oC unless otherwise specified Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC TJ TSTG Rating 80 140 7.0 1.0 -55 to +200 -55 to +200 Unit V V V A o C C o Data Sheet No. 2N3700UB Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 100 A Collector-Emitter Breakdown Voltage IC = 30 mA Emitter-Base Breakdown Voltage IE = 100 A Collector-Emitter Cutoff Current VCE = 90 V Emitter-Base Cutoff Current VEB = 5 V Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICES IEBO Min 140 80 7.0 ----- Max ------10 10 Unit V V V nA nA ON Characteristics DC Current Gain IC = 150 mA, VCE = 10 V IC = 0.1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V (pulsed) IC = 500 mA, VCE = 10 V (pulsed) IC = 1 A, VCE = 10 V (pulsed) Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA (pulsed) Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA (pulsed) IC = 500 mA, IB = 50 mA (pulsed) Symbol hFE1 hFE2 hFE3 hFE4 hFE5 VBE(sat) VCE(sat)1 VCE(sat)2 Min 100 50 90 50 15 ------- Max 300 200 --200 --1.1 0.2 0.5 Unit ----------V dc V dc V dc Small Signal Characteristics Short Circuit Forward Current Transfer Ratio IC = 1 mA, VCE = 5 V, f = 1 kHz Magnitude of Common Emitter, Small Signal, Short Circuit Symbol AC hFE |hFE| COBO CIBO rb'CC NF Min 80 5.0 --------- Max 400 20 12 60 400 4 Unit ----pF pF ps dB Forward Current Transfer Ratio VCE = 10 V, IC = 50 mA, f = 200 MHz Open Circuit Output Capacitance VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz Input Capacitance, Output Open Circuited VEB = 2.0 V, IC = 0, 100 kHz < f < 1 MHz Collector-Base Time Constant VCB = 10 V, IC = 10 mA, f = 79.8 MHz Noise Figure VCE = 10 V, IC = 100 A, Rg = 1 kOhm Switching Characteristics Pulse Response 15 ns, 50 ohm input pulse Symbol tON + tOFF Min --- Max 30 Unit ns |
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